Title :
Room temperature photoreflectance study of InGaAs/AlAs quantum wells
Author :
Mozume, T. ; Gozu, S. ; Inada, T. ; Yoshimi, A. ; Susaki, W.
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
Room temperature photoreflectance (PR) has been performed on InGaAs/AlAsSb quantum wells (QWs) grown on InP substrates. We observed clear and well-resolved structures, which could be attributed to the interband optical transitions originating in the QWs, InAlAs layers, and the InP substrate. By comparing the transition energies measured from the PR spectra with those theoretically calculated from the confined levels in the QWs, we confirmed that the previously determined conduction band offset value of 1.6 eV was reliable.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium arsenide; indium compounds; photoreflectance; semiconductor quantum wells; InGaAs-AlAsSb; InP; conduction band; confined levels; interband optical transitions; photoreflectance; quantum wells; room temperature; Energy resolution; Indium compounds; Indium gallium arsenide; Indium phosphide; Land surface temperature; Laser beams; Optical switches; Photodiodes; Photoluminescence; Temperature sensors; InGaAs/AlAsSb; photoreflectance; quantum wells;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702926
