Title :
Compact design of a 30 kV rapid capacitor charger
Author :
Giesselmann, M.G. ; Kristiansen, E.B.
Author_Institution :
Texas Tech. Univ., Lubbock, TX, USA
Abstract :
Summary form only given, as follows. This paper describes the downsizing potential of a power supply for charging a capacitor to a voltage of 30 kV, which represents 3.24 kJ of energy, in approximately 40 ms. This process should be repeatable 10-20 times in a short burst mode within a time frame of a few minutes. The primary supply is a DC source with approximately 650 V. A previous design achieved all these goals using 4 Semikron half-bridge IGBTs rated at 1200 V/1200 A each. From the operational experience with the previous charger we concluded, that the weight and volume of the inverter, which is the core of the system, can be reduced to half of the previous size. This can be achieved by using advancements in IGBT modules as well as state of the art capacitors and optimum packaging. Due to the increased capabilities of the new IGBT modules, the number of required modules can be reduced from 4 to 2. In addition, the 15 V/10 A auxiliary power supply, which was previously required, is no longer needed, since the new modules derive their auxiliary power from the main DC bus. The new IGBT modules will be connected to form an H-Bridge. A step-up transformer and a rectifier bank will be connected to the output of the H-Bridge. For compactness, the cooling fins of the modules will be removed due to the fact that the supply is only operated in short term burst mode. The original charger, which took up a standard 19 inch equipment rack, could be reduced to the size of an oversized suitcase.
Keywords :
bridge circuits; insulated gate bipolar transistors; power supplies to apparatus; pulsed power supplies; 10 A; 1200 A; 1200 V; 15 V; 3.24 kJ; 30 kV; 650 V; DC source; H-bridge; auxiliary power supply; downsizing potential; optimum packaging; power supply; rapid capacitor charger; rectifier bank; semikron half-bridge IGBT; step-up transformer; Capacitors; Diffusion tensor imaging; Insulated gate bipolar transistors; Power supplies; Pulse modulation; Pulsed power supplies; Radar; Solid state circuits; Switches; Voltage;
Conference_Titel :
Pulsed Power Plasma Science, 2001. IEEE Conference Record - Abstracts
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7141-0
DOI :
10.1109/PPPS.2001.961428