Impact of V/III ratio, CBr4 and AsH3 concentrations on the MOVPE growth of GaAsSb for InP DHBT applications

Author

Ostinelli, O. ; Liu, H.G. ; Zeng, Y.P. ; Bolognesi, C.R.

Author_Institution

Lab. for Field Theor. & Microwave Electron. (IfH), ETH Zurich, Zurich

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

The impact of growth conditions in the presence of CBr₄ is examined for the MOVPE growth of GaAsSb intended for high-performance DHBT applications. We show that the growth is controlled by competing gas phase reactions and by effective V/III flux ratios that can be quite different from those set at the gas inlet. For example, under specific conditions, the C-doping efficiency is shown to increase and then decrease with increasing CBr₄ flux.

Keywords

III-V semiconductors; MOCVD; carbon; gallium arsenide; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; surface chemistry; vapour phase epitaxial growth; GaAsSb:C; MOVPE; boundary layer reactions; doping; double heterojunction bipolar transistors; gas phase reactions; surface reactions; Ash; Doping; Epitaxial growth; Epitaxial layers; Gallium arsenide; Hydrogen; Indium phosphide; Laboratories; Lattices; Microwave theory and techniques; CBr4; GaAsSb; Type-II DHBTs; V/III ratio; alloy composition; gas phase reactions;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702929

Filename

4702929