X-ray CTR scattering analysis of As accumulation on GaInAs surface and growth temperature effects

Author

Mori, A. ; Tameoka, H. ; Tabuchi, M. ; Takeda, Y.

Author_Institution

Dept. of Mater. Sci. & Eng., Nagoya Univ., Nagoya

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

Compositional grading at hetero-interfaces in InP/GaInAs/InP structures grown by OMVPE at 590, 620, and 650degC with different growth interruption times in TBAs atmosphere were investigated utilizing X-ray crystal truncation rod scattering method. From the analysis of the X-ray CTR scattering spectra, it was shown that the lifetime of As on GaInAs surface was shorter and the As adsorption rate was higher when the growth temperature was higher. The accumulation of As changed sensitively with the change of the growth temperature via the balance of the adsorption and desorption rate of As.

Keywords

III-V semiconductors; X-ray scattering; adsorption; desorption; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; As accumulation; GaInAs; InP-GaInAs-InP; OMVPE; X-ray crystal truncation rod scattering; adsorption; compositional grading; desorption; growth temperature effects; heterointerfaces; temperature 590 degC; temperature 620 degC; temperature 650 degC; Atmosphere; Atomic layer deposition; Atomic measurements; Electromagnetic scattering; HEMTs; Indium phosphide; MODFETs; Particle scattering; Temperature; X-ray scattering; InP/GaInAs interface; MOVPE; X-ray CTR scattering; atomic scale characterization; hetero-structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702930

Filename

4702930