Title :
X-ray CTR scattering analysis of As accumulation on GaInAs surface and growth temperature effects
Author :
Mori, A. ; Tameoka, H. ; Tabuchi, M. ; Takeda, Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nagoya Univ., Nagoya
Abstract :
Compositional grading at hetero-interfaces in InP/GaInAs/InP structures grown by OMVPE at 590, 620, and 650degC with different growth interruption times in TBAs atmosphere were investigated utilizing X-ray crystal truncation rod scattering method. From the analysis of the X-ray CTR scattering spectra, it was shown that the lifetime of As on GaInAs surface was shorter and the As adsorption rate was higher when the growth temperature was higher. The accumulation of As changed sensitively with the change of the growth temperature via the balance of the adsorption and desorption rate of As.
Keywords :
III-V semiconductors; X-ray scattering; adsorption; desorption; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; As accumulation; GaInAs; InP-GaInAs-InP; OMVPE; X-ray crystal truncation rod scattering; adsorption; compositional grading; desorption; growth temperature effects; heterointerfaces; temperature 590 degC; temperature 620 degC; temperature 650 degC; Atmosphere; Atomic layer deposition; Atomic measurements; Electromagnetic scattering; HEMTs; Indium phosphide; MODFETs; Particle scattering; Temperature; X-ray scattering; InP/GaInAs interface; MOVPE; X-ray CTR scattering; atomic scale characterization; hetero-structure;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702930
