Title :
Radiation hardnessin InGaAsP lasers
Author :
Gonda, Shun-ichi
Author_Institution :
Dep. of Space Commun. Eng., Fukui Univ. of Technol., Fukui
Abstract :
Proton beams with energies of 10 and 200 MeV were irradiated onto the light emitting surfaces of InGaAsP lasers. Threshold current damage factors K were estimated from the experimental results. These were compared with previously reported hardness of neutron- and electron- irradiated InGaAsP lasers.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; proton effects; radiation hardening (electronics); semiconductor lasers; InGaAsP; electron volt energy 10 MeV; electron volt energy 200 MeV; lasers; light emitting surfaces; proton beams; radiation hardness; threshold current damage factors; Electrons; Elementary particle vacuum; Neutrons; Particle beams; Protons; Quantum well lasers; Semiconductor lasers; Space technology; Surface emitting lasers; Threshold current; InGaAsP laser; proton irradiation; radiation hardness; semiconductor laser; threshold current damage factor;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702936
