Analysis of the thermal effects of GaAs FETs under the high-power electromagnetic pulses

Author

Xu, Jianfeng ; Yin, Wen-Yan ; Mao, Jun-Fa ; Li, Le-Wei ; Drewniak, James L.

Author_Institution

Sch. of Electron. Inf. & Electr. Eng., Shanghai Jiao Tong Univ., Shanghai

Volume

3

fYear

2008

fDate

21-24 April 2008

Firstpage

1431

Lastpage

1434

Abstract

In this paper, the transient thermal characteristics of GaAs field-effect transistors (FETs) in the presence of high- power electromagnetic pulses (HP-EMP) are investigated. By hybrid finite element methods which combining element-by- element finite element method (EBE-FEM) with the preconditioned conjugate gradient (PCG) technique, transient thermal responses including the maximum channel temperature of GaAs FETs and the maximum input power density of the thermal sources are extracted which will be useful for further taking thermal protection so as to prevent on-chip device breakdown from the attack of a HP-EMP.

Keywords

III-V semiconductors; conjugate gradient methods; electromagnetic pulse; field effect transistors; finite element analysis; gallium arsenide; thermal analysis; GaAs; GaAs FET; field-effect transistors; high-power electromagnetic pulses; hybrid finite element methods; maximum channel temperature; on-chip device breakdown; preconditioned conjugate gradient technique; thermal effects analysis; transient thermal characteristics; EMP radiation effects; Electric breakdown; Electromagnetic analysis; Electromagnetic fields; Electromagnetic transients; FETs; Finite element methods; Gallium arsenide; Protection; Temperature; FEM; GaAs field-effect transistors (FETs); High-power electromagnetic pulse (HP-EMP); breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1879-4

Electronic_ISBN

978-1-4244-1880-0

Type

conf

DOI

10.1109/ICMMT.2008.4540713

Filename

4540713