Title :
Effects of W-plug via arrangement on electromigration lifetime of wide line interconnects
Author :
Skala, S. ; Bothra, S.
Author_Institution :
VLSI Technol. Inc., San Jose, CA, USA
Abstract :
The electromigration lifetime of via interconnects connecting wide lines of a fixed width is investigated for arrays with both different numbers and arrangements of vias. Lifetime variations of up to 80% are observed for different via arrays. Electromigration lifetime is found to be dominated by the reservoir area formed by the particular arrangement of vias and to a lesser extent by the magnitude of the highest current density through any of the vias in an array
Keywords :
arrays; current density; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; tungsten; W; W-plug via arrangement effects; current density; electromigration lifetime; lifetime variations; line width; reservoir area; via arrays; via interconnects; wide line interconnects; Aluminum; Current density; Electromigration; Heating; Joining processes; Optical arrays; Reservoirs; Stress; Testing; Very large scale integration;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704767
