Title :
Epitaxial growth of high quality InAs/InGaAlAs quantum dash-in-well structure on InP
Author :
Wang, Y. ; Djie, H.S. ; Hongpinyo, V. ; Tan, C.L. ; Ooi, B.S. ; Hwang, J. C M ; Fang, X.-M. ; Wu, Y. ; Fastenau, J.M. ; Liu, W.K. ; Dang, G.T. ; Chang, W.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
We report on the growth of InAs quantum-dash in InGaAlAs quantum-well structure on InP substrate using molecular beam epitaxy. The influence of different growth parameters such as InAs layer thickness, quantum barrier growth temperature, and number of stacking layers on the morphology and optical properties of dash structures were studied. The results serve as useful references for improved epitaxial growth control of InAs/InGaAlAs/InP system for optical device applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; InAs-InGaAlAs; InP; growth parameters; molecular beam epitaxy; optical properties; photoluminescence; quantum barrier growth temperature; quantum-dash; quantum-well structure; stacking layers; Epitaxial growth; Indium phosphide; Molecular beam epitaxial growth; Morphology; Optical control; Quantum dots; Quantum wells; Stacking; Substrates; Temperature; InP; dash-in-well; epitaxial growth; quantum dash;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702939
