DocumentCode
1812479
Title
1.7-μm laser emission at room temperature using highly-stacked InAs quantum dots
Author
Akahane, Kouichi ; Yamamoto, Naokatsu ; Sotobayashi, Hideyuki ; Tsuchiya, Masahiro
Author_Institution
New Generation Network Res. Center, Nat. Inst. of Inf. & Commun. Technol., Koganei
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
3
Abstract
We fabricated laser diodes containing highly stacked InAs quantum dots (QDs) using the strain-compensation technique, which showed laser emission at 1.7 mum above the threshold current of 400 mA in pulsed mode.
Keywords
III-V semiconductors; indium compounds; internal stresses; optical fabrication; quantum dot lasers; semiconductor quantum dots; InAs; highly-stacked InAs quantum dots; laser diode fabrication; laser emission; pulsed mode emission; strain compensation method; temperature 293 K to 298 K; threshold current; wavelength 1.7 mum; Capacitive sensors; Laser modes; Lattices; Molecular beam epitaxial growth; Optical pulse generation; Quantum dot lasers; Semiconductor lasers; Substrates; Surface emitting lasers; Temperature; laser diode; quantum dot; strain-compensation;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4702940
Filename
4702940
Link To Document