Title :
Polarization insensitive operation of multimode interference bistable laser all-optical flip-flop
Author :
Takeda, Koji ; Kanema, Yasuki ; Takenaka, Mitsuru ; Tanemura, Takuo ; Nakano, Yoshiaki
Abstract :
Multimode interference bistable laser diode all-optical flip-flop has been considered to be a clever candidate to achieve all-optical memory devices. In this paper, basic results of polarization-insensitive operation of all-optical flip-flop are reported. Polarization-insensitive operation of static flip-flop was demonstrated with injection power level higher than +3 dBm.
Keywords :
III-V semiconductors; flip-flops; gallium arsenide; gallium compounds; indium compounds; integrated optics; light polarisation; optical bistability; optical storage; semiconductor lasers; InGaAsP; all-optical memory devices; injection power; multimode interference bistable laser diode all-optical flip-flop; polarization-insensitive operation; tensile strained gain layer; Diode lasers; Electrodes; Fabrication; Flip-flops; Interference; Optical polarization; Optical waveguides; Quantum well devices; Semiconductor laser arrays; Vertical cavity surface emitting lasers; All-optical flip-flop; bistable laser diode; multimode interference; polarization insensitive;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702943
