Title :
Integration of organic low-k material with Cu-damascene employing novel process
Author :
Ikeda, Wasanobu ; Kudo, Hiroshi ; Shinohara, Rika ; Shimpuku, Fumihiko ; Yamada, Makoto ; Furumura, Yuji
Author_Institution :
Fujitsu Labs. Ltd., Kawasaki, Japan
Abstract :
In order to realize the fabrication of an ultra-large-scale-integrated (ULSI) circuit with high performance, a novel integration process for Cu-damascene structures employing a low dielectric constant (low-k) material as interlayer dielectric is proposed. In this process, a USG formed organic low-k material is used as a hard mask and a CMP stopper. This enables us to simplify the total process and fabricate two-level Cu metallization successfully
Keywords :
ULSI; chemical mechanical polishing; copper; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; masks; permittivity; CMP stopper; Cu-damascene; Cu-damascene structures; ULSI fabrication; USG formed organic low-k material; dielectric constant; hard mask; low-k interlayer dielectric; organic low-k material; process integration; two-level Cu metallization; ultra-large-scale-integrated circuit; Annealing; Dielectric constant; Dielectric materials; Metallization; Organic materials; Resists; Sputter etching; Sputtering; Thermal stability; Wiring;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704771
