Title :
Effect of growth temperature on the thermal stability of 1.3μm InAs/InGaAs/GaAs quantum dot structures
Author :
Ngo, C.Y. ; Yoon, S.F. ; Lim, C.S. ; Wong, Vincent ; Chua, S.J.
Author_Institution :
Nanyang Technol. Univ., Singapore
Abstract :
The effects of growth temperature on the optical properties of InAs/InGaAs/GaAs quantum dot (QD) structure were investigated at the important temperature range of 25degC to 80degC. Results from QD samples grown at low growth temperature of 450degC suggest better thermal stability as compared to that grown at 510degC. This work suggests the feasibility of obtaining better thermal stability at a low growth temperature for InAs/InGaAs/GaAs QD structures.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum dots; thermal stability; InAs-InGaAs-GaAs; growth temperature; molecular beam epitaxy; optical properties; photoluminescence; quantum dot structure; temperature 25 degC to 80 degC; temperature 510 degC; thermal stability; Gallium arsenide; Indium gallium arsenide; Land surface temperature; Molecular beam epitaxial growth; Optical buffering; Quantum dot lasers; Quantum dots; Stationary state; Temperature distribution; Thermal stability; InAs/InGaAs/GaAs; growth temperature; quantum dots (QDs); thermal stability;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702946
