Aluminum dual damascene interconnects with low-κ intra/inter-level dielectric for reduced capacitance and low cost

Author

Zhao, B. ; Feiler, D. ; Liu, Q.Z. ; Nguyen, C.H. ; Brongo, M. ; Kuei, J. ; Ramanathan, V. ; Wu, J. ; Zhang, H. ; Rumer, M. ; Biberger, M.A. ; Sachan, V. ; James, D.

Author_Institution

Rockwell Semicond. Syst., Newport Beach, CA., USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

146

Lastpage

148

Abstract

Aluminum dual damascene interconnects using a low dielectric constant (low-κ) material as intra/inter level dielectric have been successfully demonstrated. The low-κ material has led to significant reduction in both intra-level and inter-level capacitance in the dual damascene Al interconnect structures. In addition, low via resistance and good interconnect reliability characteristics have been observed in the low-cost Al/low-κ dual damascene interconnects.

Keywords

aluminium; capacitance; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; permittivity; Al; Al dual damascene interconnects; aluminum dual damascene interconnects; capacitance; dielectric constant; dual damascene Al interconnect structures; inter-level capacitance; interconnect cost; interconnect reliability; intra-level capacitance; low-k inter-level dielectric; low-k intra-level dielectric; via resistance; Aluminum; Application specific integrated circuits; Capacitance; Costs; Dielectric materials; Integrated circuit interconnections; Integrated circuit noise; Integrated circuit reliability; Sputter etching; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704775

Filename

704775