Title :
A Bi-directional Electric Field Enhanced Field Stop Reverse Blocking IGBT
Author :
Wentao Yang ; Zehong Li ; Yaoyao Jia ; JinPing Zhang ; Min Ren ; Weizhong Chen ; Qian Chen ; Bo Zhang
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China
Abstract :
In this paper, a novel Bi-directional Electric Field Enhanced Field Stop Reverse Blocking Insulated Gate Bipolar Transistor (BEFE-FS-RB-IGBT) is proposed. It features N-type field stop layers and P-type electric field enhancement regions in both top trench MOS cell part and the anode side of the device. From the simulation results, the thickness of the drift region can be reduced to 58μm, only 70% of the conventional counterpart, while maintaining 820V and 818V in forward and reverse blocking conditions, respectively. The blocking capability is 15% higher than the conventional one. Moreover, due to the carrier-storage effect, the carrier distribution during the on-state can be optimized. As a result, the proposed one has a lower on-state voltage (1.15V, 20% drop) and a less turn-off power loss (5.4mJ/cm2, 39% decrease) as well.
Keywords :
insulated gate bipolar transistors; BEFE-FS-RB-IGBT; N-type field stop layers; P-type electric field enhancement regions; bidirectional electric field enhanced field stop reverse blocking IGBT; carrier distribution; carrier storage effect; drift region; forward blocking condition; insulated gate bipolar transistor; size 58 mum; voltage 1.15 V; voltage 818 V; voltage 820 V; Anodes; Cathodes; Doping; Educational institutions; Electric fields; Insulated gate bipolar transistors; Logic gates; Carrier Store Effect; Electric Field Enhancement; Field Stop; Reverse Blocking Insulated Gate Bipolar Transistor;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6855970
