A Bi-directional Electric Field Enhanced Field Stop Reverse Blocking IGBT

Author

Wentao Yang ; Zehong Li ; Yaoyao Jia ; JinPing Zhang ; Min Ren ; Weizhong Chen ; Qian Chen ; Bo Zhang

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China (UESTC), Chengdu, China

fYear

2014

fDate

15-19 June 2014

Firstpage

39

Lastpage

42

Abstract

In this paper, a novel Bi-directional Electric Field Enhanced Field Stop Reverse Blocking Insulated Gate Bipolar Transistor (BEFE-FS-RB-IGBT) is proposed. It features N-type field stop layers and P-type electric field enhancement regions in both top trench MOS cell part and the anode side of the device. From the simulation results, the thickness of the drift region can be reduced to 58μm, only 70% of the conventional counterpart, while maintaining 820V and 818V in forward and reverse blocking conditions, respectively. The blocking capability is 15% higher than the conventional one. Moreover, due to the carrier-storage effect, the carrier distribution during the on-state can be optimized. As a result, the proposed one has a lower on-state voltage (1.15V, 20% drop) and a less turn-off power loss (5.4mJ/cm², 39% decrease) as well.

Keywords

insulated gate bipolar transistors; BEFE-FS-RB-IGBT; N-type field stop layers; P-type electric field enhancement regions; bidirectional electric field enhanced field stop reverse blocking IGBT; carrier distribution; carrier storage effect; drift region; forward blocking condition; insulated gate bipolar transistor; size 58 mum; voltage 1.15 V; voltage 818 V; voltage 820 V; Anodes; Cathodes; Doping; Educational institutions; Electric fields; Insulated gate bipolar transistors; Logic gates; Carrier Store Effect; Electric Field Enhancement; Field Stop; Reverse Blocking Insulated Gate Bipolar Transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6855970

Filename

6855970