Title :
Hot electron transistors controlled by insulated gate with 70 NM-wide emitter
Author :
Saito, Hisashi ; Hino, Takahiro ; Miyamoto, Yasuyuki ; Furuya, Kazuhito
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo
Abstract :
The emitter width of the hot electron transistor controlled by an insulated gate was reduced to 70 nm by an improved fabrication process. In a previous study, the observed output conductance was twofold higher than transconductance. In this study, the output conductance was reduced from 115 mS/mm to 20 mS/mm by the improved fabrication process and a clear current modulation was also confirmed.
Keywords :
hot electron transistors; insulated gate field effect transistors; current modulation; emitter; hot electron transistors; insulated gate; output conductance; size 70 nm; Ballistic transport; Electrodes; Electron emission; Fabrication; Insulation; Scanning electron microscopy; Transconductance; Transistors; Tungsten; Voltage; component; hot electron transistor; insulated gate; narrowing emitter;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702950
