DocumentCode :
1812726
Title :
W-band low-noise amplifier with 50 nm In0.8GaP/In0.4AlAs/In0.35GaAs metamorphic HEMT
Author :
Kim, Sung-Won ; Koh, Yu-Min ; Choi, Woo-Yeol ; Kim, Hyung-Tae ; Kwon, Young-Woo ; Seo, Kwang-Seok
Author_Institution :
Dept. Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul
fYear :
2008
fDate :
25-29 May 2008
Firstpage :
1
Lastpage :
3
Abstract :
W-band low-noise amplifier (LNA) has been successfully demonstrated with 50 nm metamorphic HEMT (MHEMT) technologies. 50 nm MHEMT showed a gm.max of 760 mS/mm, a fT of 216 GHz, and a fmax of 400 GHz in spite of indium content of 35 % in the channel. W-band LNA with three-stage showed the small signal gain of 9.4plusmn1.8 dB from 40 GHz to 110 GHz. These results are well suited for high frequency applications.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; low noise amplifiers; In0.8GaP-In0.4AlAs-In0.35GaAs; LNA; W-band low-noise amplifier; frequency 40 GHz to 110 GHz; high frequency; indium content; metamorphic HEMT; size 50 nm; small signal gain; Electric breakdown; Frequency; Gallium arsenide; Gold; HEMTs; Indium phosphide; Low-noise amplifiers; Substrates; Wet etching; mHEMTs; HEMT; T-gate; fT; fmax; metamorphic;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
ISSN :
1092-8669
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2008.4702951
Filename :
4702951
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1812726
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