Bit-error-rate measurement of GaInAsP/InP distributed reflector laser with wirelike active regions

Author

Lee, SeungHun ; Ullah, Saeed Mahmud ; Shindo, Takahiko ; Davis, Kyle Spencer ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

Dynamic characteristics of 1.55 mum wavelength distributed reflector (DR) lasers with wirelike active regions were examined for the first time. BER measurements over a wide temperature range were performed. 10 km error-free transmission at 10 Gbit/s was confirmed by using a dispersion-shifted fiber.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; error statistics; gallium arsenide; gallium compounds; indium compounds; GaInAsP-InP; bit error rate; dispersion-shifted fiber; distributed reflector laser; dynamic characteristics; wavelength 1.55 mum; wirelike active regions; Distributed Bragg reflectors; Distributed feedback devices; Fiber lasers; Gain measurement; Indium phosphide; Laser feedback; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Distributed reflector (DR) laser; dynamic characteristics; high speed modulation; semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702952

Filename

4702952