Title :
Short-circuit robustness of SiC Power MOSFETs: Experimental analysis
Author :
Castellazzi, Alberto ; Fayyaz, Asad ; Li Yang ; Riccio, M. ; Irace, A.
Author_Institution :
Machines & Control Group, Univ. of Nottingham, Nottingham, UK
Abstract :
This paper proposes a thorough experimental characterization of the performance of commercially available SiC Power MOSFETs under short-circuit conditions. The purpose is to assess and understand the degradation process and the failure mechanisms that limit device reliability to identify optimal routes for subsequent technology development. This paper complements electro-thermal functional tests with structural characterization offering deeper insight into device technology related aspects.
Keywords :
failure analysis; power MOSFET; semiconductor device reliability; short-circuit currents; silicon compounds; wide band gap semiconductors; SiC; degradation process; device reliability; device technology; electro-thermal functional tests; failure mechanisms; power MOSFETs; short-circuit conditions; short-circuit robustness; structural characterization; Degradation; Logic gates; MOSFET; Short-circuit currents; Silicon carbide; Stress; Temperature measurement;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6855978
