Impact of low pressure long throw sputtering method on submicron copper metallization

Author

Saito, T. ; Ohashi, N. ; Yasuda, J. ; Noguchi, J. ; Imai, T. ; Sasajima, K. ; Hiruma, K. ; Yamaguchi, H. ; Owada, N.

Author_Institution

Device Dev. Center, Hitachi Ltd., Tokyo, Japan

fYear

1998

fDate

1-3 Jun 1998

Firstpage

160

Lastpage

162

Abstract

Cu metallization technology using sputtered Cu wiring and W-plug is developed. Submicron trenches for wiring with up to 0.4 μm width are filled with Cu by a low-pressure long-throw sputtering method followed by a reflow process. Blanket-W CVD with a sputtered W barrier is used for via filling. Using these technologies, multilevel Cu interconnect test structures are fabricated successfully

Keywords

chemical vapour deposition; copper; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; isolation technology; sputter deposition; 0.4 micron; Cu metallization technology; Cu-W; W-plug; blanket-W CVD; copper metallization; long-throw sputtering method; low pressure long throw sputtering method; multilevel Cu interconnect test structures; reflow process; sputtered Cu wiring; sputtered W barrier; trench width; via filling; wiring trenches; Annealing; Atomic layer deposition; Copper; Filling; Heat treatment; Metallization; Sputtering; Testing; Tin; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704779

Filename

704779