Title :
Monolithic, Sb-based electrically pumped VCSELs emitting at 2.3μm
Author :
Ducanchez, A. ; Cerutti, L. ; Garnache, A. ; Genty, F.
Author_Institution :
Inst. d´´Electron. du Sud (IES), Univ. Montpellier 2, Montpellier
Abstract :
Demonstration of a 2.3 mum emission at room temperature under quasi continuous-wave operation from a Sb-based monolithic Vertical Cavity surface emitting laser is reported. The structure is composed of 2 n-doped AlAsSb/GaSb distributed Bragg reflectors, a type-I GaInAsSb/AlGaAsSb multi quantum well active region and a tunnel junction. For 80 mum diameter devices, density threshold of 0.8 kA/cm2 at RT is achieved.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; semiconductor quantum wells; surface emitting lasers; AlAsSb-GaSb-GaInAsSb-AlGaAsSb; VCSELs; density threshold; distributed Bragg reflectors; monolithic vertical cavity surface emitting laser; multi quantum well active region; quasi continuous-wave operation; room temperature; size 80 mum; temperature 293 K to 298 K; tunnel junction; wavelength 2.3 mum; Distributed Bragg reflectors; Gas lasers; Indium phosphide; Laser tuning; Semiconductor lasers; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Wet etching; Mid-Infrared; VCSELs; antimonide semiconductors;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702955
