Self-annealing of electrochemically deposited copper films in advanced interconnect applications

Author

Ritzdorf, Tom ; Graham, Lyndon ; Jin, Shu ; Mu, Chun ; Fraser, David

Author_Institution

Semitool Inc., Kalispell, MT, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

166

Lastpage

168

Abstract

This paper describes the phenomenon of self-annealing of electrochemically deposited copper films. Sheet resistance was shown to decrease by approximately 20% within tens of hours after deposition at room temperature. At the same time, tensile film stress increased and X-ray diffraction results indicate a very large increase in the degree of film (111) texture, and/or grain growth. This annealing effect has an activation energy of approximately 1.1 eV, indicating that the time dependence on temperature is very strong

Keywords

X-ray diffraction; annealing; copper; electric resistance; electrodeposition; grain growth; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; internal stresses; surface texture; 1.1 eV; Cu; X-ray diffraction; annealing effect activation energy; electrochemically deposited copper films; film (111) texture; grain growth; interconnect applications; room temperature; self-annealing; sheet resistance; temperature-time dependence; tensile film stress; Aluminum; Annealing; Copper; Delay; Electromigration; Semiconductor device manufacture; Semiconductor films; Temperature; Tensile stress; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704781

Filename

704781