• DocumentCode
    1812870
  • Title

    A fully integrated power amplifier for 802.11a application

  • Author

    Peng, Yan-Jun ; Song, Jia-You ; Wang, Zhi-Gong

  • Author_Institution
    Inst. of RF-& OE-ICs, Southeast Univ., Nanjing
  • Volume
    3
  • fYear
    2008
  • fDate
    21-24 April 2008
  • Firstpage
    1485
  • Lastpage
    1487
  • Abstract
    A fully integrated linear power amplifier (PA) for 5 GHz WLAN application has been realized in the OMMIC 0.2 mum AlGaAs/InGaAs/GaAs PHEMT process. The single-ended two-stage power amplifier uses on-chip inductors and capacitors for input, interstage and output matching. Under a single supply voltage of +3.5 V, this power amplifier exhibits linear output power of 26.9 dBm (P1dB), small signal gain of 28.6 dB and the power added efficiency (PAE) of 36.1% at P1dB. The die size is only 1.5 mm times 1.0 mm.
  • Keywords
    capacitors; inductors; power amplifiers; wireless LAN; OMMIC; PHEMT process; WLAN application; bandwidth 5 GHz; capacitors; fully integrated power amplifier; on-chip inductors; output matching; power added efficiency; size 0.2 mum; Capacitors; Gallium arsenide; Impedance matching; Indium gallium arsenide; Inductors; PHEMTs; Power amplifiers; Power generation; Voltage; Wireless LAN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
  • Conference_Location
    Nanjing
  • Print_ISBN
    978-1-4244-1879-4
  • Electronic_ISBN
    978-1-4244-1880-0
  • Type

    conf

  • DOI
    10.1109/ICMMT.2008.4540727
  • Filename
    4540727
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1812870