Title :
A novel Cu-plug formation using high pressure reflow process
Author :
Maekawa, K. ; Yamamura, T. ; Fukada, T. ; Ohsaki, A. ; Miyoshi, H.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
In this paper, we present a novel Cu-plug formation in high-aspect-ratio via holes using a high pressure reflow process. A high-aspect-ratio hole with a diameter of 0.27 μm and a depth of 1.6 μm is successfully filled with Cu. The Cu-plug process applied to via holes gives good contact resistance
Keywords :
ULSI; contact resistance; copper; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; 0.27 micron; 1.6 micron; Cu; Cu-plug formation; Cu-plug process; contact resistance; high pressure reflow process; high-aspect-ratio via holes; via hole depth; via hole diameter; via holes; Argon; Filling; Laboratories; Oxidation; Plugs; Research and development; Scanning electron microscopy; Testing; Tin; Ultra large scale integration;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704782
