Title :
Exciton fine structure of nitrogen isoelectronic centers in GaAs
Author :
Harada, Yukihiro ; Kita, Takashi ; Wada, Osamu
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Kobe
Abstract :
We have studied the exciton fine structures of nitrogen isoelectronic centers in GaAs. Atomically controlled nitrogen doping into GaAs realizes a series of distinct, strong, narrow bandwidth bound-exciton luminescences. The exciton fine structure has been found to consist of four signals, which can be selected by the linear polarization. Our calculations have succeeded in reproducing the optical selection characteristics when considering both the J-J coupling and local-field effects in the C2v symmetry.
Keywords :
III-V semiconductors; excitons; fine structure; gallium arsenide; light polarisation; luminescence; nitrogen; semiconductor doping; spin-orbit interactions; C2v symmetry; GaAs:N; J-J coupling; electronic structure; exciton fine structure; linear polarization; narrow bandwidth bound-exciton luminescences; nitrogen doping; nitrogen isoelectronic centers; optical selection characteristics; Atom optics; Bandwidth; Doping; Elementary particle exchange interactions; Excitons; Gallium arsenide; Luminescence; Nitrogen; Optical polarization; Signal resolution; exchange interaction; exciton fine structure; isoelectronic trap; nitrogen impurity;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702956
