1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding

Author

Jia Woei Wu ; Chowdhury, Shuvro ; Hitchcock, C. ; Lu, James Jian-Qiang ; Chow, T.P. ; Woochan Kim ; Khai Ngo

Author_Institution

Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

2014

fDate

15-19 June 2014

Firstpage

95

Lastpage

98

Abstract

A 1200V, 25A bi-directional silicon DMOS-IGBT has been successfully fabricated using a hydrophobic bonding process at low temperature (400°C). With the aid of a glass carrier approach, a flat and clean bonding surface for producing an electrically stable and transparent junction was achieved. The static and dynamic performance with and without back-side gate control are presented and compared.

Keywords

hydrophobicity; insulated gate bipolar transistors; power transistors; wafer bonding; back side gate control; bidirectional DMOS IGBT; clean bonding surface; current 25 A; dynamic performance; electrically stable junction; flat bonding surface; fusion wafer bonding; glass carrier; hydrophobic bonding process; static performance; temperature 400 C; transparent junction; voltage 1200 V; Bidirectional control; Bonding; Insulated gate bipolar transistors; Logic gates; Performance evaluation; Silicon; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6855984

Filename

6855984