Title :
1200V, 25A bi-directional Si DMOS IGBT fabricated with fusion wafer bonding
Author :
Jia Woei Wu ; Chowdhury, Shuvro ; Hitchcock, C. ; Lu, James Jian-Qiang ; Chow, T.P. ; Woochan Kim ; Khai Ngo
Author_Institution :
Dept. of Electr., Comput., & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
A 1200V, 25A bi-directional silicon DMOS-IGBT has been successfully fabricated using a hydrophobic bonding process at low temperature (400°C). With the aid of a glass carrier approach, a flat and clean bonding surface for producing an electrically stable and transparent junction was achieved. The static and dynamic performance with and without back-side gate control are presented and compared.
Keywords :
hydrophobicity; insulated gate bipolar transistors; power transistors; wafer bonding; back side gate control; bidirectional DMOS IGBT; clean bonding surface; current 25 A; dynamic performance; electrically stable junction; flat bonding surface; fusion wafer bonding; glass carrier; hydrophobic bonding process; static performance; temperature 400 C; transparent junction; voltage 1200 V; Bidirectional control; Bonding; Insulated gate bipolar transistors; Logic gates; Performance evaluation; Silicon; Switches;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6855984
