Analysis and simulation of feedback capacitance effect in Class-E power amplifiers

Author

Liao, Zhongyu ; Zhu, Xiaowei

Author_Institution

State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing

Volume

3

fYear

2008

fDate

21-24 April 2008

Firstpage

1495

Lastpage

1498

Abstract

In this paper, the effect of feedback capacitance (gate-to-drain capacitance Cgd) on the output current of class-e power amplifiers (PAs) is analyzed, with finite choke inductance and zero switched-on resistance. An analytical method is utilized to describe the performance of the feedback capacitance during the overall operation duties. The method expresses the effect clearly. To verify the validity of our theory, computer simulation based on the GaAs FET FLC301XP model is presented. The effect of gate-to-drain capacitance is simulated on a wide range at microwave frequency. The results show good agreement with our theoretical analysis.

Keywords

III-V semiconductors; feedback; field effect transistors; gallium arsenide; power amplifiers; semiconductor device models; FET FLC301XP model; GaAs; class-e power amplifiers; computer simulation; feedback capacitance effect analysis; feedback capacitance effect simulation; finite choke inductance; gate-to-drain capacitance; microwave frequency; zero switched-on resistance; Analytical models; Capacitance; Computer simulation; Gallium arsenide; Inductance; Inductors; Microwave FETs; Output feedback; Performance analysis; Power amplifiers; Class-E power amplifier; feedback capacitance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1879-4

Electronic_ISBN

978-1-4244-1880-0

Type

conf

DOI

10.1109/ICMMT.2008.4540730

Filename

4540730