Title :
Application of charge based capacitance measurement (CBCM) technique in interconnect process development
Author :
Bothra, Subhas ; Rezvani, G.A. ; Sur, Harlan ; Farr, M. ; Shenoy, J.N.
Author_Institution :
Dept. of Technol. Dev., VLSI Technol. Inc., San Jose, CA, USA
Abstract :
The charge based capacitance measurement (CBCM) technique (Chen et al, IEDM p. 69, 1996) was used in order to measure femto-farad level intermetal capacitances between metal lines in different configurations. The results are presented and compared with the calculated numbers using the Rafael simulation program. These structures are used to evaluate the impact of process changes such as the use of low k dielectric on parasitic interconnect capacitance. The parasitic capacitances are determined by using a variety of interconnect structures with varying line width and spacing. Such measurements with low k materials show that the formation of these materials in small narrow spaces may be quite different from that in wide open areas
Keywords :
capacitance measurement; circuit simulation; dielectric thin films; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; permittivity; Rafael simulation program; charge based capacitance measurement technique; interconnect process development; interconnect structures; intermetal capacitance; line spacing; line width; low k dielectric; low k materials; metal line configurations; metal lines; parasitic capacitance; parasitic interconnect capacitance; process change effects; Capacitance measurement; Capacitors; Current measurement; Dielectric materials; Dielectric measurements; Frequency; Parasitic capacitance; Planarization; Testing; Variable structure systems;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704785
