Title :
High performance InP/InGaAs strained quantum well interband photodiodes for nir resonant photodetection
Author :
Garrigues, M. ; Gil-Sobraques, R. ; Leclercq, J.-L. ; Parillaud, O. ; Decobert, J. ; Achouche, M.
Author_Institution :
CNRS, Lyon Univ., Lyon
Abstract :
We report experimental characterization results for Near Infrared planar photodiodes with a potential cut-off wavelength higher than 1900 nm. The active layer is made up of three compressively strained InGaAs quantum wells. This photodiode is to be finally integrated in a MOEMS tunable resonant cavity for the realization of a low cost microspectrometer intended to agro-food applications.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; micro-optics; photodiodes; semiconductor quantum wells; InP-InGaAs; MOEMS tunable resonant cavity; NIR resonant photodetection; active layer; agro-food applications; compressively strained quantum wells; near infrared planar photodiodes; photodetector; strained quantum well interband photodiodes; Absorption; Costs; Distributed Bragg reflectors; Epitaxial growth; Fabry-Perot; Indium gallium arsenide; Indium phosphide; Photodetectors; Photodiodes; Resonance; InGaAs; RCE; near infrared resonant cavity; photodetector; quantum well; tunable;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702959
