Title :
The effects of stress on the formation of titanium silicide
Author :
Cheng, S.L. ; Huang, H.Y. ; Peng, Y.C. ; Chen, L.J. ; Tsui, B.Y. ; Tsai, C.J. ; Guo, S.S. ; Yu, K.H.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
The effects of stress on the formation of titanium silicide have been investigated. Compressive stress presented in the silicon substrate was found to retard TiSi2 formation significantly. On the other hand, tensile stress presented in the silicon substrate was found to promote the formation of TiSi2. In addition, the TiSi2 film thickness was found to decrease and increase with the compressive and tensile stress levels, respectively. The results indicated that compressive stress hinders Si migration through the Ti-Si interface so that the formation of TiSi2 films is retarded. In contrast, tensile stress promotes Si diffusion to facilitate TiSi2 formation
Keywords :
chemical interdiffusion; compressive testing; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; interface phenomena; internal stresses; tensile testing; titanium compounds; Si; Si migration; Ti-Si; Ti-Si interface; TiSi2 film thickness; TiSi2 formation; TiSi2 formation promotion; TiSi2 formation retardation; TiSi2-Si; compressive stress; self-aligned silicide process; silicon substrate; stress effects; tensile stress; titanium silicide; titanium silicide formation; Compressive stress; Optical films; Semiconductor films; Silicidation; Silicides; Silicon; Substrates; Tensile stress; Thermal stresses; Titanium;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704788
