Title :
InP DHBT-based ICs for 100 Gbit/s data transmission
Author :
Driad, R. ; Makon, R.E. ; Hurm, V. ; Schneider, K. ; Benkhelifa, F. ; Lösch, R. ; Rosenzweig, J.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg
Abstract :
This paper reports state-of-the-art mixed signal ICs, including a distributed amplifier and a multiplexer-core intended for use in 100 Gbit/s optical communication systems (Ethernet). Using a manufacturable InP DHBT technology, exhibiting current gains of >80 and cut-off frequencies (fT and fmax) of >300 GHz, the broadband amplifier achieved a gain of 21 dB and a 3-dB bandwidth of 95 GHz (GxBW>1 THz), whereas, the 2:1 multiplexer-core has been tested at data rates up to 138 Gbit/s.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; monolithic integrated circuits; optical communication; wide band gap semiconductors; DHBT-based IC; Ethernet; InP; bit rate 100 Gbit/s; cut-off frequencies; data rates; multiplexer-core; optical communication systems; Bandwidth; Broadband amplifiers; Cutoff frequency; Data communication; Distributed amplifiers; Ethernet networks; Gain; Indium phosphide; Manufacturing; Optical fiber communication; Ethernet; distributed amplifier; heterojunction bipolar transistors; indium phosphide; integrated circuits; multiplexer;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702960
