Title :
Evolution of current filaments limiting the safe-operating area of high-voltage trench-IGBTs
Author :
Toechterle, C. ; Pfirsch, F. ; Sandow, C. ; Wachutka, G.
Author_Institution :
Inst. for Phys. of Electrotechnol., Tech. Univ. Munchen, Munich, Germany
Abstract :
An improved understanding of the physical processes leading to the formation of current filaments and latch-up in large arrays of monolithically integrated high voltage (3.3kV) trench-IGBT cells during the turn-off process of the device is the prerequisite for enhancing the robustness of the device. To this end, numerical simulations have been performed revealing the rim of the safe-operating area (SOA) and what happens beyond it.
Keywords :
insulated gate bipolar transistors; power bipolar transistors; current filaments evolution; latch-up; numerical simulations; physical processes; safe-operating area; trench-IGBT cells; turn-off process; voltage 3.3 kV; Charge carrier processes; Current density; Insulated gate bipolar transistors; Junctions; Nonhomogeneous media; Periodic structures; Semiconductor process modeling;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6855994
