Influence of band offsets on carrier overflow and recombination lifetime in quantum well lasers grown on GaAs and InP

Author

Susaki, Wataru ; Kakuda, Shinichi ; Tanaka, Masashi ; Nishimura, Hideaki ; Tomioka, Akihiro

Author_Institution

Osaka Electro-Commun. Univ., Neyagawa

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

Carrier recombination lifetime below threshold has been measured for quantum well lasers with different band offset between the quantum wells and the barrier layers. It is longer for larger band offset as high as ~5 ns in InGaAs quantum wells formed on GaAs, and shorter for smaller band offset as low as ~1 ns in InGaAsP quantum wells formed on InP.

Keywords

III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; semiconductor quantum wells; GaAs; InGaAs; InGaAsP; InP; band offsets; barrier layers; carrier overflow; carrier recombination lifetime; quantum well lasers; Charge carrier lifetime; Delay effects; Electrons; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Quantum well lasers; Radiative recombination; Temperature; Threshold current; AlGaAs; Band Offset; Carrier Lifetime; Electron overflow; InGaAs; InGaAsP; InGaP; Quantum Well Lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702962

Filename

4702962