Title :
Influence of band offsets on carrier overflow and recombination lifetime in quantum well lasers grown on GaAs and InP
Author :
Susaki, Wataru ; Kakuda, Shinichi ; Tanaka, Masashi ; Nishimura, Hideaki ; Tomioka, Akihiro
Author_Institution :
Osaka Electro-Commun. Univ., Neyagawa
Abstract :
Carrier recombination lifetime below threshold has been measured for quantum well lasers with different band offset between the quantum wells and the barrier layers. It is longer for larger band offset as high as ~5 ns in InGaAs quantum wells formed on GaAs, and shorter for smaller band offset as low as ~1 ns in InGaAsP quantum wells formed on InP.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; semiconductor quantum wells; GaAs; InGaAs; InGaAsP; InP; band offsets; barrier layers; carrier overflow; carrier recombination lifetime; quantum well lasers; Charge carrier lifetime; Delay effects; Electrons; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Quantum well lasers; Radiative recombination; Temperature; Threshold current; AlGaAs; Band Offset; Carrier Lifetime; Electron overflow; InGaAs; InGaAsP; InGaP; Quantum Well Lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702962
