One step effective planarization of shallow trench isolation

A methodology for single step effective planarization of shallow trench isolation (STI) was developed and proposed in this paper for 0.25 μm technology and beyond. Two modeling approaches on effective integration of the chemical mechanical polishing (CMP) process to planarize STI structures are the major techniques of the proposed methodology. The first modeling method, which is defined by the CMP planarity efficiency experiment, is an empirical model for determining the polished film thickness before CMP. Another modeling method is based on the Silvaco CMP simulation tool for predicting pattern density effects during planarization. Several experiments have been conducted to produce an effective planarization methodology