Title :
RIE-plasma induced optical property degradation in GaInAsP/InP quantum-well structures
Author :
Kurokawa, Munetaka ; Plumwongrot, Dhanorm ; Ozawa, Koji ; Maruyama, Takeo ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Tokyo
Abstract :
The origin and model of the time dependence of RIE-plasma induced optical property degradation of GaInAsP/InP quantum-well structures were investigated. Non-radiative recombination was enhanced by irradiating CH4/H2-plasma, and was found to be recovered during high temperature annealing in the embedding growth by organometallic vapor-phase-epitaxy.
Keywords :
III-V semiconductors; MOCVD; annealing; gallium arsenide; gallium compounds; indium compounds; optical fabrication; photoluminescence; plasma materials processing; quantum well lasers; sputter etching; vapour phase epitaxial growth; GaInAsP-InP; RIE-plasma induced optical property degradation; annealing; long-wavelength lasers; nonradiative recombination; organometallic vapor-phase-epitaxial growth; photoluminescence; quantum-well structures; reactive ion etching; Annealing; Degradation; Distributed feedback devices; Indium phosphide; Optical buffering; Optical feedback; Plasma applications; Plasma temperature; Quantum wells; Radiative recombination; CH4/H2 plasma damage; GaInAsP/InP; PL; RIE; annealing; non-radiative recombination;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702963
