Title :
Nitrogen effect on post-nucleation tungsten CVD film growth
Author :
Petri, R. ; Hauf, H. ; Berenbaum, D. ; Favreau, JC ; Mazet, P.
Author_Institution :
ATMEL, Rousset, France
Abstract :
The addition of nitrogen to the tungsten deposition process results in perturbation of the film growth after nucleation. This gas induces an incubation time, delaying the onset of deposition of the main film by up to 5 seconds. A phenomenological model is proposed based on the competition between the saturation of the tungsten interface adsorption sites by N2 and their removal by fluorine species
Keywords :
chemical vapour deposition; integrated circuit interconnections; integrated circuit metallisation; interface states; nitrogen; nucleation; tungsten; 5 s; N2; W; film deposition onset delay; film growth perturbation; fluorine species-based nitrogen removal; gas-induced incubation time; nitrogen; nitrogen addition effects; phenomenological model; post-nucleation tungsten CVD film growth; tungsten deposition process; tungsten interface adsorption site saturation; tungsten interface adsorption sites; Chemical industry; Chemical vapor deposition; Delay effects; Electronic switching systems; Electronics industry; Hydrogen; Nitrogen; Optical films; Semiconductor films; Tungsten;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704792
