A novel trench Schottky rectifier structure with controlled conductivity modulation

Author

Mudholkar, Mihir ; Quddus, Mohammed Tanvir ; Bushong, Dean ; Sarwari, Ahmad ; Salih, Ali

Author_Institution

Stand. Products Group, ON Semicond., Phoenix, AZ, USA

fYear

2014

fDate

15-19 June 2014

Firstpage

139

Lastpage

142

Abstract

A Trench MOS Barrier Schottky rectifier (TMBS) structure with a novel conductivity modulation scheme has been presented. The conductivity modulation in the structure is achieved by using remote conductivity modulation (RCM) centers in the mesa regions, with varying frequency and doping profiles to achieve the desired trade-off between forward voltage drop and switching speed of the device. Using the new modulation scheme, devices with low forward voltage drop or low switching speeds can be obtained without the need for any lifetime control in the drift region. The RCM scheme has been implemented in a 200 V, 30 A trench Schottky device, and it has been demonstrated experimentally that by employing the RCM scheme, best-in-class forward voltage drop, breakdown voltage and switching speed are achieved.

Keywords

Schottky barriers; Schottky diodes; electric potential; solid-state rectifiers; RCM; TMBS structure; best-in-class forward voltage drop; breakdown voltage; current 30 A; doping profiles; frequency profiles; mesa regions; remote conductivity modulation; switching speed; trench MOS Barrier Schottky rectifier structure; voltage 200 V; Conductivity; Doping; Implants; Metals; Modulation; Performance evaluation; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on

Conference_Location

Waikoloa, HI

ISSN

1943-653X

Print_ISBN

978-1-4799-2917-7

Type

conf

DOI

10.1109/ISPSD.2014.6855995

Filename

6855995