Title :
Laser programmable metallic vias
Author :
Bernstein, Joseph B. ; Zhang, Wei ; Nicholas, Carl H.
Author_Institution :
Dept. of Mater. & Nucl. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Solid metallic connections have been successfully formed between two standard levels of metallization using a focused IR laser system. This process of laser via formation has successfully made connections with resistances of <0.8 Ω. Commercial laser repair systems used extensively by the memory industry were employed to perform over 100,000 individual links over a wide set of laser parameters without failure. This technology provides the yield and reliability necessary for fabrication of rapid turnaround MCM-D, wafer scale integration (WSI), and system-on-a-chip applications. Furthermore, because it is an additive process and the passivation remains completely intact, it lends itself to redundancy for programming high current power and ground lines
Keywords :
integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; integrated circuit yield; laser materials processing; maintenance engineering; microprocessor chips; multichip modules; optical focusing; passivation; redundancy; wafer-scale integration; 0.8 ohm; focused IR laser system; high current ground line programming; high current power line programming; interconnect reliability; interconnect yield; laser parameters; laser programmable metallic vias; laser repair systems; laser via formation; memory industry; passivation; rapid turnaround MCM-D; redundancy; resistance; solid metallic connections; standard metallization levels; system-on-a-chip; wafer scale integration; Additives; Circuits; Dielectrics; Inorganic materials; Optical materials; Optical pulses; System-on-a-chip; Thermal conductivity; Thermal expansion; Wafer scale integration;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704793
