Title :
New via formation process for suppressing the leakage current between adjacent vias for hydrogen silicate based inorganic SOG intermetal dielectric
Author :
Oda, N. ; Usami, T. ; Yokoyama, T. ; Matsumoto, A. ; Mikagi, K. ; Gomi, H. ; Sakai, I.
Author_Institution :
NEC Corp., Sagamihara, Japan
Abstract :
The leakage current between the adjacent vias in case of hydrogen silicate based inorganic spin-on glass (HSI-SOG) intermetal dielectric (IMD) is investigated for 0.6 μm pitch multilevel interconnection with borderless vias. We propose a new via formation process using an NH 3 plasma treatment to decrease this leakage current by protecting the via sidewalls. The leakage level is considerably suppressed by this NH3 plasma treatment. The dielectric constant of HSI-SOG is maintained at a low level. This technology is essential to high-performance sub-0.25 μm CMOS devices with HSI-SOG IMD
Keywords :
CMOS integrated circuits; dielectric thin films; glass; hydrogen compounds; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; leakage currents; permittivity; plasma materials processing; spin coating; surface treatment; 0.25 micron; 0.6 micron; CMOS devices; HSI-SOG IMD; HSI-SOG intermetal dielectric; HSiO; NH3; NH3 plasma treatment; adjacent via leakage current; borderless vias; dielectric constant; hydrogen silicate based inorganic SOG intermetal dielectric; hydrogen silicate based inorganic spin-on glass; leakage current; leakage current suppression; multilevel interconnection; via formation process; via sidewall protection; Dielectric constant; Dielectric devices; Dry etching; Hydrogen; Leakage current; Plasma applications; Plasma devices; Plasma stability; Resists; Sputter etching;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704794
