Title :
Study on the stability of HDP-SiOF film and IMD application for 0.25 μm LSI device
Author :
Shin, H.J. ; Kim, S.J. ; Kim, B.J. ; Kang, H.K. ; Lee, M.Y.
Author_Institution :
Samsung Electron. Co., Yongin city, South Korea
Abstract :
A multilevel interconnection technology using an HDP-CVD SiOF film is demonstrated for 0.25 μm LSI devices. A stable HDP-SiOF film is realized as the intermetal dielectric (IMD). When HDP-SiOF has Si-F2 bonds and silicon dangling bonds, the film stress changes during thermal stressing. This unstable HDP-SiOF causes deformation of the metal underlayer due to the film stress change. The device performance with a stable HDP-SiOF film is improved, showing a 12% reduction in wiring capacitance. In addition, gate oxide leakage characteristics are also superior to those of conventional undoped silicate glass (USG). The stable HDP-SiOF film has been successfully applied as an IMD layer for 0.25 μm LSI devices
Keywords :
capacitance; dangling bonds; deformation; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; internal stresses; large scale integration; leakage currents; plasma CVD; silicon compounds; stability; thermal stresses; 0.25 micron; HDP-CVD SiOF film; HDP-SiOF film IMD; HDP-SiOF film stability; IMD layer; LSI devices; Si-F2 bonds; SiOF; device performance; film stress; gate oxide leakage characteristics; metal underlayer deformation; multilevel interconnection technology; silicon dangling bonds; stable HDP-SiOF film; stable HDP-SiOF film intermetal dielectric; thermal stress; undoped silicate glass; unstable HDP-SiOF; wiring capacitance; Capacitance; Compressive stress; Dielectrics; Electrical resistance measurement; Large scale integration; Semiconductor films; Silicon; Stability; Tensile stress; Thermal stresses;
Conference_Titel :
Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-4285-2
DOI :
10.1109/IITC.1998.704795
