InGaAs-InP Uni-Traveling-Carrier photodiodes for high power capability

Author

Chtioui, Mourad ; Enard, Alain ; Carpentier, Daniéle ; Bernard, Stéphan ; Rousseau, Benjamin ; Lelarge, François ; Pommereau, Frédéric ; Achouche, Mohand

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

We compare two uni-traveling-carrier photodiodes for high power applications. Saturation current is increased from 62 mA to 90 mA at 20 GHz due to improved series-resistance and heat power dissipation. The associated 3 -dB bandwidth is shown to increase simultaneously from 30 GHz at 40 mA to 32 GHz at 70 mA.

Keywords

III-V semiconductors; electrical resistivity; gallium arsenide; indium compounds; photodiodes; InGaAs-InP; current 40 mA; current 70 mA; frequency 20 GHz; heat power dissipation; high power capability; saturation current; series resistance; uni-traveling-carrier photodiodes; Bandwidth; Capacitance measurement; Dark current; Indium gallium arsenide; Indium phosphide; Photoconductivity; Photodiodes; Space charge; Substrates; Voltage; −1dB compression; high power photodiode; photodiode; series-resistance; space-charge effect; thermal dissipation; uni-traveling-carrier;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702965

Filename

4702965