A Low DC-Power Multiplexer IC using an InP-based CML-MOBILE RTD/HBT Technology

Author

Choi, Sunkyu ; Lee, Jongwon ; Jeong, Yongsik ; Yang, Kyounghoon

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

A Low DC-Power Multiplexer IC using an InP-based CML (current mode logic) -MOBILE (Monostable bistable transition logic element) RTD/HBT Technology has been proposed and fabricated. The proposed multiplexer topology is composed of two differential CML-MOBILE ICs and a newly proposed RZ-to-NRZ selector IC. By using the NDR (negative differential resistance) - based new topology, the DC power consumption has been significantly reduced compared to the conventional topology. The operation speed of the IC is confirmed up to 15 Gb/s. The power consumption of the multiplexer IC was measured to be as low as 34 mW at a supply voltage of -2V.

Keywords

III-V semiconductors; digital integrated circuits; electrical resistivity; heterojunction bipolar transistors; indium compounds; integrated circuit design; low-power electronics; multiplexing equipment; power consumption; power integrated circuits; power semiconductor diodes; resonant tunnelling diodes; CML-MOBILE RTD/HBT technology; DC power consumption; InP; bit rate 15 Gbit/s; current mode logic; heterojunction bipolar transistor; low DC-power multiplexer IC; monostable bistable transition logic element; multiplexer topology; negative differential resistance; power 34 mW; resonant tunneling diode; voltage -2 V; Energy consumption; Frequency conversion; Heterojunction bipolar transistors; High speed integrated circuits; Indium phosphide; Logic circuits; Multiplexing; Timing; Topology; Voltage; InP; NDR; heterojunction bipolar transistor; multiplexer; resonant tunneling diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702966

Filename

4702966