DocumentCode :
1813289
Title :
Evidence of lateral coupling on the carrier dynamics in InAs/InP(311)B quantum dots
Author :
Doré, F. ; Labbé, C. ; Folliot, H. ; Nakkar, A. ; Paranthoën, C. ; Chevalier, N. ; Tavernier, K. ; Even, J. ; Loualiche, S. ; Lagarde, D. ; Balocchi, A. ; Marie, X.
Author_Institution :
UMR FOTON (Fonctions Opt. pour les Technol. de l´´Inf.), INSA, Rennes
fYear :
2008
fDate :
25-29 May 2008
Firstpage :
1
Lastpage :
4
Abstract :
We present an evidence of lateral coupling between InAs/InP(311)B quantum dots (QD) embedded in a quaternary alloy at high dot surface density (8.3times1010 QD.cm-2). This coupling is highlighted using time-resolved photoluminescence at different detection energies between low and high dot surface density.
Keywords :
III-V semiconductors; carrier lifetime; indium compounds; photoluminescence; semiconductor quantum dots; time resolved spectra; tunnelling; InAs-InP; carrier dynamics; detection energies; dot surface density; lateral coupling; quantum dots; quaternary alloy; time-resolved photoluminescence; tunnel assisted lateral carrier diffusion; Gallium arsenide; Indium phosphide; Photoluminescence; Power lasers; Quantum dot lasers; Quantum dots; Semiconductor lasers; Stacking; Temperature; Threshold current; InAs quantum dots; coupling; time resolved photoluminescence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
ISSN :
1092-8669
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
Type :
conf
DOI :
10.1109/ICIPRM.2008.4702968
Filename :
4702968
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1813289
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