DocumentCode
1813314
Title
Characterization of 1×5 InP/InGaAsP waveguide switch based on optical phased array
Author
Tanemura, Takuo ; Takeda, Koji ; Nakano, Yoshiaki
Author_Institution
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo
fYear
2008
fDate
25-29 May 2008
Firstpage
1
Lastpage
4
Abstract
A monolithically integrated 1times5 InP/InGaAsP optical switch based on optical phased array is fabricated and characterized. Wide operating bandwidth covering entire C-band (1520-1580 nm) and nanoseconds dynamic response are demonstrated for the first time.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical arrays; optical switches; optical waveguides; semiconductor switches; C-band; InP-InGaAsP; monolithic integration; nanoseconds dynamic response; operating bandwidth; optical phased array; optical switch; wavelength 1520 nm to 1580 nm; Indium phosphide; Optical arrays; Optical packet switching; Optical refraction; Optical switches; Optical variables control; Optical waveguides; Phase shifters; Phased arrays; Slabs; InP devices; Optical packet switching; Optical switch; Photonic integrated circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location
Versailles
ISSN
1092-8669
Print_ISBN
978-1-4244-2258-6
Electronic_ISBN
1092-8669
Type
conf
DOI
10.1109/ICIPRM.2008.4702969
Filename
4702969
Link To Document