Title :
Low noise and high gain-bandwidth product AlInAs avalanche photodiodes
Author :
Rouvié, Anne ; Carpentier, Daniéle ; Décobert, Jean ; Lagay, Nadine ; Pommereau, Frederic ; Achouche, Mohand
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis
Abstract :
We demonstrate a planar junction AlInAs APD using Carbon as p-doping impurity of the charge layer allowing to achieve simultaneously a high primary sensitivity of 0.9 A/W, a low dark current (Idark(M=10)=17 nA at ambient temperature), a low excess noise factor (f(M=10)=3.5) and high gaintimesbandwidth product over 140 GHz.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; carbon; indium compounds; AlInAs:C; avalanche photodiodes; charge layer; high gain-bandwidth; low dark current; low noise; Absorption; Avalanche photodiodes; Dark current; Epitaxial growth; Epitaxial layers; Impurities; Indium phosphide; Ionization; Signal to noise ratio; Substrates; APD; AlInAs; dark current; excess noise factor; gain-bandwidth product; ionization coefficients ratio; multiplication;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702970
