Title :
Selective wet chemical etching of GaInSb and AlInSb for 6.25 Å HBT fabrication
Author :
Mairiaux, E. ; Desplanque, L. ; Wallart, X. ; Dambrine, G. ; Zaknoune, M.
Author_Institution :
IEMN - Inst. d´´Electron., de Microelectron. et de Nanotechnol., Villeneuve-d´´Ascq
Abstract :
Selective wet etching of Ga0.5In0.5Sb on Al0.55In0.45Sb and Al0.55In0.45Sb on Ga0.5In0.5Sb were demonstrated using tartaric acid and hydrochloric acid based solutions, respectively. Controllable etch rates in the range 400-1000 Aring/min resulting in smooth surfaces and selectivities of >10 suitable for use in HBT processing were achieved. By calculating the activation energies, we also determined the rate-limiting step in the etching.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; indium compounds; multilayers; semiconductor epitaxial layers; Ga0.5In0.5Sb-Al0.55In0.45Sb; HBT; activation energies; hydrochloric acid; rate-limiting step; selective wet chemical etching; tartaric acid; Chemicals; Electrons; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Lattices; Substrates; Water; Wet etching; X-ray diffraction; AlInSb; GaInSb; HBT; antimony; wet chemical etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702971
