Selective wet chemical etching of GaInSb and AlInSb for 6.25 Å HBT fabrication

Author

Mairiaux, E. ; Desplanque, L. ; Wallart, X. ; Dambrine, G. ; Zaknoune, M.

Author_Institution

IEMN - Inst. d´´Electron., de Microelectron. et de Nanotechnol., Villeneuve-d´´Ascq

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

3

Abstract

Selective wet etching of Ga_0.5In_0.5Sb on Al_0.55In_0.45Sb and Al_0.55In_0.45Sb on Ga_0.5In_0.5Sb were demonstrated using tartaric acid and hydrochloric acid based solutions, respectively. Controllable etch rates in the range 400-1000 Aring/min resulting in smooth surfaces and selectivities of >10 suitable for use in HBT processing were achieved. By calculating the activation energies, we also determined the rate-limiting step in the etching.

Keywords

III-V semiconductors; aluminium compounds; etching; gallium compounds; indium compounds; multilayers; semiconductor epitaxial layers; Ga_0.5In_0.5Sb-Al_0.55In_0.45Sb; HBT; activation energies; hydrochloric acid; rate-limiting step; selective wet chemical etching; tartaric acid; Chemicals; Electrons; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Lattices; Substrates; Water; Wet etching; X-ray diffraction; AlInSb; GaInSb; HBT; antimony; wet chemical etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702971

Filename

4702971