Title :
Development and characterization of a new low-loss monolithic AC switch based on super-gain BJT
Author :
Batut, N. ; Schellmanns, A. ; Jacques, S. ; Ren, Zhang ; Phung, L.V. ; Ihuel, F.
Author_Institution :
GREMAN, Univ. of Tours, Tours, France
Abstract :
This article deals with the development of an innovative low-loss monolithic AC switch based on super-gain BJT manufactured on silicon substrate. The GREMAN laboratory has started this study for ten years. Two main categories of AC switch are described: hybrid AC switch (based on the discrete association of 2 super-gain BJTs) and monolithic AC switch. The key criteria to design and process the monolithic power device are particularly discussed taking into consideration its application areas and its manufacturability.
Keywords :
bipolar transistor switches; GREMAN laboratory; hybrid AC switch; low-loss monolithic AC switch; monolithic AC switch; monolithic power device; silicon substrate; super-gain BJT; Doping; Implants; Junctions; Mathematical model; Substrates; Switches; Switching circuits;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856010