Monte Carlo comparison of the noise performance of InAlAs/InGaAs Double-Gate and Standard HEMTs

Author

Vasallo, B.G. ; Wichmann, N. ; Bollaert, S. ; Roelens, Y. ; Cappy, A. ; Gonzalez, Temoatzin ; Pardo, Diego ; Mateos, J.

Author_Institution

Dept. Fis. Aplic., Univ. de Salamanca, Salamanca

fYear

2008

fDate

25-29 May 2008

Firstpage

1

Lastpage

4

Abstract

A comparison of the noise behavior of Double-Gate and Standard High Electron Mobility Transistors is established by means of Monte Carlo simulations. The intrinsic noise P, R, and C parameters are only moderately improved in the DG-device, but the extrinsic minimum noise figure NF_min reveals a significantly better extrinsic noise performance, more noticeable for higher frequencies due to the better dynamic performance of the DG-device.

Keywords

Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor device noise; InAlAs-InGaAs; Monte Carlo simulation; double-gate HEMTs; extrinsic minimum noise figure; intrinsic noise; noise performance; standard high electron mobility transistors; Electrodes; Frequency; HEMTs; Indium compounds; Indium gallium arsenide; Leakage current; MODFETs; Monte Carlo methods; Noise figure; Schottky barriers; Double-Gate HEMTs; Monte Carlo simulations; noise performance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on

Conference_Location

Versailles

ISSN

1092-8669

Print_ISBN

978-1-4244-2258-6

Electronic_ISBN

1092-8669

Type

conf

DOI

10.1109/ICIPRM.2008.4702973

Filename

4702973