Title :
Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots
Author :
Richard, S. ; Burin, J.P. ; Labbé, C. ; Cornet, C. ; Folliot, H. ; Paranthoën, C. ; Nakkar, A. ; Rohel, T. ; Thoumyre, F. ; Tavernier, K. ; Loualiche, S.
Author_Institution :
FOTON UMR CNRS 6082, INSA de Rennes, Rennes
Abstract :
We present photocurrent measurements of InAs/InGaAsP quantum dots embedded in a PIN diode grown on InP(311)B substrates. From the 300 K spectrum we deduce the ground and first excited states of the dots. Their energies are consistent with photoluminescence spectroscopy. Absorption coefficient was extracted from photocurrent.
Keywords :
III-V semiconductors; absorption coefficients; excited states; gallium compounds; indium compounds; p-i-n diodes; photoconductivity; photoluminescence; semiconductor quantum dots; InAs-InGaAsP; InP; PIN diode; absorption coefficient; excited states; photocurrent; photoluminescence spectroscopy; quantum dots; temperature 300 K; Dark current; Electromagnetic wave absorption; Indium phosphide; Lighting; Performance evaluation; Photoconductivity; Quantum dots; Spectroscopy; Substrates; Wavelength measurement; InAs quantum dots; absorption; photocurrent;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702977
