Title :
Controllability of switching speed and loss for SiC JFET/Si MOSFET cascode with external gate resistor
Author :
Shimizu, Hiroshi ; Akiyama, Soramichi ; Yokoyama, Naoki ; Inomata, Hisao ; Kobayashi, Hideo ; Fujiki, Amanda ; Iijima, Toru ; Tomiyama, Kiyotaka ; Sasaki, Yutaka ; Ibori, Satoshi
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan
Abstract :
The SiC JFET/Si MOSFET cascode is an attractive alternative to conventional Si MOSFETs or IGBTs due to its low on-resistance and good switching performance. However, dv/dt control without increased switching loss is difficult when using a conventional gate resistor or capacitor for the MOSFET. In this paper, a dv/dt and switching loss control method that ensures a good switching performance for the cascode with an external gate resistor for JFET, as well as for MOSFET, is presented.
Keywords :
MOSFET; junction gate field effect transistors; silicon compounds; MOSFET; SiC; conventional gate resistor; on-resistance; silicon carbide JFET-silicon MOSFET cascode; switching loss; switching loss control method; switching performance; switching speed controllability; JFETs; Logic gates; MOSFET; Resistors; Silicon; Silicon carbide; Switches;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on
Conference_Location :
Waikoloa, HI
Print_ISBN :
978-1-4799-2917-7
DOI :
10.1109/ISPSD.2014.6856016
