Title :
AlSb/InAs HEMTs on InP substrate using wet and dry etching for mesa isolation
Author :
Olivier, Aurélien ; Gehin, Thomas ; Desplanque, Ludovic ; Wallart, Xavier ; Roelens, Yannick ; Dambrine, Gilles ; Cappy, Alain ; Bollaert, Sylvain ; Lefebvre, Eric ; Malmkvist, Mikael ; Grahn, Jan
Author_Institution :
Inst. of Electron. Microelectron. & Nanotechnol., Villeneuve d´´Ascq
Abstract :
In this paper, we present experimental results on AlSb/InAs HEMTs with deep and shallow mesa using wet and dry etching techniques respectively. Similar electrical results have been obtained using both techniques.
Keywords :
III-V semiconductors; aluminium compounds; etching; high electron mobility transistors; indium compounds; AlSb-InAs; HEMTs; deep mesa; dry etching; mesa isolation; shallow mesa; wet etching; Doping; Dry etching; Fabrication; Gold; HEMTs; Indium phosphide; MODFETs; Resists; Substrates; Wet etching; AlSb/InAs; HEMT; ICP; dry etching; wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on
Conference_Location :
Versailles
Print_ISBN :
978-1-4244-2258-6
Electronic_ISBN :
1092-8669
DOI :
10.1109/ICIPRM.2008.4702979
